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NTMFS4821N
Power MOSFET
30 V, 58.5 A, Single N ? Channel, SO ? 8 FL
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? Thermally Enhanced SO ? 8 Package
? These are Pb ? Free Device
Applications
? Refer to Application Note AND8195/D
? CPU Power Delivery
? DC ? DC Converters
? High Side Switching
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
30 V
http://onsemi.com
R DS(ON) MAX
6.95 m W @ 10 V
10.8 m W @ 4.5 V
D (5,6)
I D MAX
58.5 A
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
30
± 20
V
V
G (4)
Continuous Drain
Current R q JA
(Note 1)
Power Dissipation
R q JA (Note 1)
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
P D
13.8
10
2.14
A
W
S (1,2,3)
N ? CHANNEL MOSFET
S
4821N
S
AYWZZ
Continuous Drain
Current R q JA v
10 sec
Power Dissipation
R q JA, t v 10 sec
Continuous Drain
Current R q JA
(Note 2)
Power Dissipation
R q JA (Note 2)
Continuous Drain
Current R q JC
(Note 1)
Power Dissipation
R q JC (Note 1)
Pulsed Drain
Current
Steady
State
t p =10 m s
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T C = 25 ° C
T C = 85 ° C
T C = 25 ° C
T A = 25 ° C
I D
P D
I D
P D
I D
P D
I DM
22.4
16.1
5.61
8.8
6.4
0.87
58.5
42.3
38.5
117
A
W
A
W
A
W
A
MARKING
DIAGRAM
D
1
SO ? 8 FLAT LEAD S
CASE 488AA G
STYLE 1 D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
D
D
Current limited by package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
T A = 25 ° C
I Dmaxpkg
T J ,
T STG
I S
dV/dt
100
? 55 to
+150
38.5
6
A
° C
A
V/ns
Device
NTMFS4821NT1G
NTMFS4821NT3G
Package
SO ? 8FL
(Pb ? Free)
SO ? 8FL
Shipping ?
1500 /
Tape & Reel
5000 /
Single Pulse Drain ? to ? Source Avalanche
Energy (V DD = 50 V, V GS = 10 V,
I L = 24 A pk , L = 0.3 mH, R G = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
T L
86
260
mJ
° C
(Pb ? Free) Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb ? Free strategy
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
? Semiconductor Components Industries, LLC, 2012
May, 2012 ? Rev. 4
1
Publication Order Number:
NTMFS4821N/D
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相关代理商/技术参数
NTMFS4823N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 30 A, Single N−Channel, SO−8 FL
NTMFS4823NT1G 功能描述:MOSFET NFET SO8FL 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMFS4823NT3G 功能描述:MOSFET NFET SO8FL 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMFS4825NFET1G 功能描述:MOSFET NFETFL 30V 171A 2mOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMFS4825NFET3G 功能描述:MOSFET NFETFL 30V 171A 2mOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMFS4826NET1G 功能描述:MOSFET NFETFL 30V 66A 5.9mOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMFS4826NET3G 功能描述:MOSFET NFETFL 30V 66A 5.9mOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMFS4827NET1G 功能描述:MOSFET NFETFL 30V 58.5A 6.9mOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube